Moduły RF Polyfetu

Firma Polyfet produkuje moduły RF stosując technologię MOSFET i GaN.


Moc
Pout
częstotliwość pracy
dolna górna K zasilanie
moduł [W] [MHz] [MHz] [dB] [V] charakterystyczne
MKAD01130804324Low frequency
MQAE21237201312.5Low Voltage
MVAD01230403024Thru-hole mounting
MWAL012302005524High gain/power
MKAL0221001005028High gain/power
MMAL015100153025Thru-hole mounting
MNAL015100153025SMA connectors
MJBL01101001001628Single Stage
MGCF21205022312High linearity
MCCL012010052728Thru-hole mounting
MADL0120110102528Bottom mounting
MLCQ0220512403728Good size vs gain
MLCQ0320512603728High power density
MCCQ2120520102514.5Low Vds and broad band
MCCR2120600102012Low Vds and broad band
MCCQ0220520152728Thru-hole mounting
MCCQ0320520152725High Bvdss
MHCV01201000103028Ultra Broadband
MADK21308852512.5Bottom mounting
MCDK213088102512Thru-hole mounting
MCDK223088102712Tight Vagc
MCDK233088102712Fast Rise Time
MGDK213088103012SMA connectors
MADQ0130470152528Bottom mounting
MADQ0630470152528Fast Rise Time
MBDQ0130470301028Single Stage
MADQ0230512152528Bottom mounting
MDDQ02305121525282 Vds pins
MGDQ0130512152528SMA connectors
MBDQ0330512501024Single Stage
MTDQ0130512501024Single Stage
MSCQ0130512100826Single Stage
MSCQ02305121501728High power, Broadband
MGMP0122540011828Highly Linear
MUMR21225600102514.81.75in Long
MSMV0222510001301428Broadband rugged ldmos
MSUV4196012601001348GaN based



Znak nrZnaczenieUwagi
IM=moduł
IItyp obudowy A, B & C are 1" cube
IIIdolna częstotliwość graniczna C=20Mhz    D=30Mz
IVgórna częstotliwość granicznaQ=512Mhz  R=600Mhz
Vnapięcie pracy0=28    2=12,5    4=48 [V]
VIseria