*POLYFET RF DEVICES *09/03/98 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * VG=3.0 ID=155.65MA * Valid for LP701, LK701 * D G S .SUBCKT L1B1/PF 20 10 30 LGATE 10 11 0.62N RGATE 11 12 0.49 CG 10 30 0.35P CRSS 12 17 2.25P CISS 12 14 64.4P LS 14 30 0.038N CS 14 30 2.32P LD 17 20 0.77N CD 20 30 4.8P R_RC 16 17 0.11 C_RC 14 16 8.38P MOS 13 12 14 14 L1B1MOS L=1.5U W= 0.08 ;D G S B LEVEL1 JFET 17 14 13 L1B1JF ;D G S DBODY 14 17 L1B1DB ;P N .MODEL L1B1MOS NMOS(VTO=2.6 KP=2.25E-5 LAMBDA=0.15 RD= 0.2 RS= 0.25) .MODEL L1B1JF NJF (VTO=-6.8 BETA=0.4 LAMBDA=1) .MODEL L1B1DB D (CJO=95.0P RS=0.25 VJ=0.4 M=0.4 BV= 65.0) .ENDS *$