*POLYFET RF DEVICES *09/03/98 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER *VG=3.0 ID=312.86MA * D G S * Valid for LP702, LK702 .SUBCKT L1B2/PF 20 10 30 LGATE 10 11 0.35N RGATE 11 12 0.44 CG 10 30 3.25P CRSS 12 17 3.42P CISS 12 14 125.6P LS 14 30 0.023N CS 14 30 2.34P LD 17 20 0.47N CD 20 30 3.8P R_RC 16 17 1.46 C_RC 14 16 19.9P MOS 13 12 14 14 L1B2MOS L=1.5U W= 0.16 ;D G S B LEVEL1 JFET 17 14 13 L1B2JF ;D G S DBODY 14 17 L1B2DB ;P N .MODEL L1B2MOS NMOS(VTO=2.6 KP=2.25E-5 LAMBDA=0.15 RD= 0.1 RS= 0.12) .MODEL L1B2JF NJF (VTO=-6.8 BETA=0.5 LAMBDA=1) .MODEL L1B2DB D (CJO=190.0P RS=0.25 VJ=0.4 M=0.4 BV= 65.0) .ENDS *$