*POLYFET RF DEVICES
*03/12/07 LP601
*PHONE:(805)484-4210; FAX:(805)3393  CONTACT: MR. S.K. LEONG 
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET
*NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER 
*Vg=4.4V; Id=200.6ma
*                  D  G  S
*
.SUBCKT  LP601/PF 20 10 30
LGATE 10  11     0.77N
RGATE 11  12     0.002
CG    10  30     2.5P
CRSS  12  17     0.98P
CISS  12  14     13.8P
LS    14  30     0.077N
CS    14  30     2.64P
LD    17  20     0.98N
CD    20  30     0.005P
R_RC  16  17     1000
C_RC  14  16     20.2P
MOS   13  12  14  14     LP601MOS  L=1.0U W= 0.019 ;D G S B LEVEL1
JFET  17  14  13         LP601JF		   ;D G S
DBODY 14  17             LP601DB		   ;P N 

.MODEL   LP601MOS NMOS(VTO=3.2  KP=0.9E-5 LAMBDA=0.15 RD= 0.55 RS= 0.55)
.MODEL   LP601JF  NJF (VTO=-6.8 BETA=6 LAMBDA=1)
.MODEL   LP601DB  D   (CJO=40.0P  RS=0.25 VJ=.6 M=0.25 BV= 65.0)
.ENDS
*$