*POLYFET RF DEVICES
*07/12/07 3rd REVISION
*PHONE:(805)484-4210; FAX:(805)3393  CONTACT: MR. S.K. LEONG 
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET
*VGS=3.5 IDQ=238.8 MA
*NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER 
* LR301
*                D  G  S

.SUBCKT  LR301/PF 20 10 30
RG1  0.535535  
R1   76.7028 
C1   144.143    
CISS 129.721
CRSS 17.8296  
LG   0.985337      
CD   0.144969 
CS   2.76115  
CG   3.9679   
LS   0.0474825   
LD   0.529616     
MOS   13  12  14  14     LR301MOS  L=1.1U W= 0.353 ;D G S B LEVEL1
JFET  17  14  13         LR301JF		   ;D G S
DBODY 14  17             LR301DB		   ;P N

.MODEL   LR301MOS NMOS(VTO=3.2  KP=0.9E-5 LAMBDA=0.15 RD= 0.045 RS= 0.055)
.MODEL   LR301JF  NJF (VTO=-6.8 BETA=6.0 LAMBDA=1)
.MODEL   LR301DB  D   (CJO=395.0P  RS=0.25 VJ=0.6 M=0.25 BV= 65.0)
.ENDS
*$