*POLYFET RF DEVICES *04/30/99 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * LR401 * VGS=2.9 IDQ=632 MA * D G S .SUBCKT L4A1/PF 20 10 30 LGATE 10 11 0.001N RGATE 11 12 0.442 CG 10 30 0.112P CRSS 12 17 4.79P CISS 12 14 80.0P LS 14 30 0.032N CS 14 30 2.14P LD 17 20 0.001N CD 20 30 0.007P R_RC 16 17 8.6 C_RC 14 16 0.4P MOS 13 12 14 14 L4A1MOS L=1.0U W= 0.14 ;D G S B LEVEL1 JFET 17 14 13 L4A1JF ;D G S DBODY 14 17 L4A1DB ;P N .MODEL L4A1MOS NMOS(VTO=2.1 KP=0.9E-5 LAMBDA=0.15 RD=0.13 RS=0.14) .MODEL L4A1JF NJF (VTO=-6.8 BETA=6.0 LAMBDA=1) .MODEL L4A1DB D (CJO=140.0P RS=0.25 VJ=0.6 M=0.25 BV= 65.0) .ENDS *$