*POLYFET RF DEVICES *10/04/99 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET * Vg=3.3 ID=198ma *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * S1C 1 DIE; SC721 * D G S .SUBCKT S1C1/PF 20 10 30 LGATE 10 11 2.3N RGATE 11 12 0.2 CG 10 30 0.01P CRSS 12 17 4.8P CISS 12 14 40.0P LS 14 30 0.22N CS 14 30 0.01P LD 17 20 2.42N CD 20 30 0.1P R_RC 16 17 284 C_RC 14 16 180P MOS 13 12 14 14 S1C1MOS L=1.1e-6 W= 0.083 ;D G S B LEVEL1 JFET 17 14 13 S1C1JF ;D G S DBODY 14 17 S1C1DB ;P N .MODEL S1C1MOS NMOS(VTO=2.6 KP=0.6E-5 LAMBDA=0.15 RD= 0.18 RS= 0.19) .MODEL S1C1JF NJF (VTO=-6.8 BETA=1 LAMBDA=1) .MODEL S1C1DB D (CJO=115.0P RS=0.25 VJ=0.7 M=0.26 BV= 40.0) .ENDS *$