*POLYFET RF DEVICES *08/19/98 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *Vg=2.63V ID=448MA *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * S1A 2 DIE; SD702, SK702, SH702 * D G S .SUBCKT S1A2/PF 20 10 30 LGATE 10 11 0.63N RGATE 11 12 0.59 CG 10 30 0.86P CRSS 12 17 6.96P CISS 12 14 93.7P LS 14 30 0.14N CS 14 30 0.08P LD 17 20 0.72N CD 20 30 0.43P R_RC 16 17 6.5 C_RC 14 16 23.9P MOS 13 12 14 14 S1A2MOS L=1.1U W= 0.166 ;D G S B LEVEL1 JFET 17 14 13 S1A2JF ;D G S DBODY 14 17 S1A2DB ;P N .MODEL S1A2MOS NMOS(VTO=2.3 KP=2.2E-5 LAMBDA=0.5 RD= 0.14 RS= 0.17) .MODEL S1A2JF NJF (VTO=-6.8 BETA=0.3 LAMBDA=1) .MODEL S1A2DB D (CJO=190.0P RS=0.25 VJ=0.7 M=0.3 BV= 65.0) .ENDS *$