*POLYFET RF DEVICES *08/19/98 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET * Vg=2.63 ID=223ma *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * S1A 1 DIE; SP701, SQ701 * D G S .SUBCKT S1A1/PF 20 10 30 LGATE 10 11 1.18N RGATE 11 12 1.37 CG 10 30 1.58P CRSS 12 17 3.53P CISS 12 14 57.2P LS 14 30 0.22N CS 14 30 0.02P LD 17 20 1.08N CD 20 30 0.296P R_RC 16 17 58.4 C_RC 14 16 11P MOS 13 12 14 14 S1A1MOS L=1.1U W= 0.083 ;D G S B LEVEL1 JFET 17 14 13 S1A1JF ;D G S DBODY 14 17 S1A1DB ;P N .MODEL S1A1MOS NMOS(VTO=2.3 KP=2.2E-5 LAMBDA=0.5 RD= 0.28 RS= 0.35) .MODEL S1A1JF NJF (VTO=-6.8 BETA=0.3 LAMBDA=1) .MODEL S1A1DB D (CJO=96.0P RS=0.25 VJ=0.7 M=0.3 BV= 65.0) .ENDS *$