*POLYFET RF DEVICES *01/27/02 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *VGS=3.6 IDQ=686 MA *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * SM401 * D G S .SUBCKT SM401/PF 20 10 30 LGATE 10 11 1.5N RGATE 11 12 0.01 CG 10 30 4.0P CRSS 12 17 24.4P CISS 12 14 256P LS 14 30 0.42N CS 14 30 0.01P LD 17 20 1.9N CD 20 30 1.54P R_RC 16 17 11.5 C_RC 14 16 72.1P MOS 13 12 14 14 SM401MOS L=1.1U W= 0.498 ;D G S B LEVEL1 JFET 17 14 13 SM401JF ;D G S DBODY 14 17 SM401DB ;P N .MODEL SM401MOS NMOS(VTO=3.15 KP=0.9E-5 LAMBDA=0.15 RD= 0.045 RS= 0.055) .MODEL SM401JF NJF (VTO=-6.8 BETA=1.0 LAMBDA=1.0) .MODEL SM401DB D (CJO=576.0P RS=0.25 VJ=0.6 M=0.29 BV= 65.0) .ENDS *$