S*POLYFET RF DEVICES 
*MAY 4TH 2001
*PHONE:(805)484-4210; FAX:(805)494-3393  CONTACT:MR. S.K. LEONG
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET
*TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=4.3V FOR IDQ=455MA
*MODEL APPLICABLE FOR SR341.
*  NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER
*		( ;D  G  S )
.SUBCKT SR341/PF  20  10  30
LG     10  11  0.29n
RGATE  11  12  0.73
CG     10  30  0.01P
CRSS   12  17  15.3P
CISS   12  14  490P
LS     14  30  0.2N 
CS     14  30  0.02P
LD     17  20  0.1N
CD     20  30  2.9P
R_RC   16  17  2.2
C_RC   14  16  31.2P
MOS    13  12  14  14 SR341MOS L=1.1U W=0.778      ;D G S B LEVEL1
JFET   17  14  13     SR341JF                      ;D G S
DBODY  14  17         SR341DB                      ;P N
 
.MODEL SR341MOS NMOS (VTO=4 KP=0.9E-5 LAMBDA=0.15 RD=0.065 RS=0.07)
.MODEL SR341JF  NJF  (VTO=-6.8 BETA=1 LAMBDA=1)
.MODEL SR341DB  D    (CJO=1100P RS=0.25 VJ=0.6 M=0.4 BV=13)
.ENDS
*$