*POLYFET RF DEVICES *08/19/98 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *VG=2.63 ID=681ma *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * S1A 3 DIE; SD703, SR703, SH703 * D G S .SUBCKT S1A3/PF 20 10 30 LGATE 10 11 0.524N RGATE 11 12 0.424 CG 10 30 0.24P CRSS 12 17 11.73P CISS 12 14 113.8P LS 14 30 0.1N CS 14 30 0.068P LD 17 20 0.832N CD 20 30 0.154P R_RC 16 17 7.8 C_RC 14 16 37P MOS 13 12 14 14 S1A3MOS L=1.1U W= 0.249 ;D G S B LEVEL1 JFET 17 14 13 S1A3JF ;D G S DBODY 14 17 S1A3DB ;P N .MODEL S1A3MOS NMOS(VTO=2.3 KP=2.2E-5 LAMBDA=0.5 RD= 0.09 RS= 0.11) .MODEL S1A3JF NJF (VTO=-6.8 BETA=0.5 LAMBDA=1) .MODEL S1A3DB D (CJO=280.0P RS=0.25 VJ=0.7 M=0.3 BV= 65.0) .ENDS *$