*POLYFET RF DEVICES
*10/09/01
*PHONE:(805)484-4210; FAX:(805)3393  CONTACT: MR. S.K. LEONG 
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET
*VGS=3.5 IDQ=841 MA
*NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER 
* SV401
*                D  G  S
.SUBCKT  SV401/PF 20 10 30
LGATE 10  11     0.57N
RGATE 11  12     0.15
CG    10  30     3.9P
CRSS  12  17     20.0P
CISS  12  14     264P
LS    14  30     0.22N
CS    14  30     6.3P
LD    17  20     0.4N
CD    20  30     2.9P
R_RC  16  17     5.0
C_RC  14  16     137.1P
MOS   13  12  14  14     SV401MOS  L=1.1U W= 0.499 ;D G S B LEVEL1
JFET  17  14  13         SV401JF		   ;D G S
DBODY 14  17             SV401DB		   ;P N

.MODEL   SV401MOS NMOS(VTO=3.0  KP=0.9E-5 LAMBDA=0.15 RD= 0.042 RS= 0.052)
.MODEL   SV401JF  NJF (VTO=-6.8 BETA=1.0 LAMBDA=1.0)
.MODEL   SV401DB  D   (CJO=580.0P  RS=0.25 VJ=0.6 M=0.29 BV= 65.0)
.ENDS
*$